KDR331E

SEMICONDUCTOR TECHNICAL DATA HIGH SPEED SWITCHING. FEATURES Low Forward Voltage : VF=0.25(Typ.) @IF=5mA Small Package : ESM. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range * : Unit Rating. Total Rating=Unit Rating 1.5 VRM VR IFM IO IFSM PD Tj Tstg Topr RATING 15 10 100 * 50 * 1* 100 125 -55 125 -40 100 UNIT V V mA mA A mW C A G H KDR331E SCHOTTKY BARRIER TYPE DIODE E B DIM MILLIMETERS A 1.60+_ 0.10 2 D B 0.85+_ 0.10 13 C 0.70+_ 0.10 D 0.27+0.10/-0.05 E 1.60+_ 0.10 G 1.00+_ 0.10 H 0.50 J 0.13+_ 0.05 J 1. ANODE 1 2. ANODE 2 3. CATHODE 3 21 ESM Marking Type Name UW ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current VF(1) VF(2) VF(3) IR Total Capacitance CT TEST CONDITION IF=1mA IF=5mA IF=50mA VR=10V VR=0V, f=1MHz MIN. - TYP. 0.21 0.25 0.35 13 MAX. - 0.30 0.50 20 40 UNIT V A pF 2000. 11. 3 Revision No : 0 1/2 FORWARD CURRENT IF (mA) KDR331E IF - VF 1 Ta=23 C 0.1 0.01 0 100 200 300 400 FORWARD VOLTAGE VF (mV) 500 CT - VR 14 12 10 8 6 4 2 0 0.01 0.1 1 10 20 REVERSE VOLTAGE VR (V) POWER DISSIPATION P (mW) REVERSE CURRENT IR (A) 10 Ta=23 C IR - VR 1 0.1 0.01 0 2 4 6 8 10 REVERSE VOLTAGE VR (V) 12 P - Ta 120 100 80 60 40 20 0 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta ( C) ...