KDR322

SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Low Forward Voltage : VF=0.54V (Typ.). Low Reverse Current : IR=5 A (Max.). Small Package : USM. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO PD Tj Tstg RATING 45 40 300 100 100 125 -55 125 UNIT V V mA mA mW C L A J G KDR322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE E MB M 2 13 NK N 1. N.C 2. ANODE 3. CATHODE DIM MILLIMETERS DA B 2.00+_ 0.20 1.25 +_ 0.15 C 0.90 +_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.00-0.10 L 0.70 H M 0.42+_ 0.10 N 0.10 MIN 3 21 USM Marking Type Name UL Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current VF (1) VF (2) VF (3) IR Total Capacitance CT TEST CONDITION IF=1mA IF=10mA IF=100mA VR=40V VR=0, f=1MHz MIN. - TYP. 0.28 0.36 0.54 18 MAX. - 0.60 5 25 UNIT V A pF 2008. 9. 8 Revision No : 3 1/2 FORWARD CURRENT I F (A) Ta=100 C Ta=25 C Ta=-25 C KDR322 300m 100m 30m 10m 3m 1m 0.3m 0.1m 0 I F - VF 0.2 0.4 0.6 0.8 FORWARD VOLTAGE V F (V) 1.0 100 m 30 m 10 m 3m 1m 300n 100n 30n 10n 3n 1n 0.3n 0.1n 0 IR - VR Ta=100 C Ta=75 C Ta=50 C Ta=25 C Ta=0 C Ta=-25 C 10 20 30 40 REVERSE VOLTAGE VR (V) 50 TOTAL CAPACITANCE CT (pF) CT - VR 100 50 30 10 5 3 1 0 4 8 12 16 20 24 28 32 36 REV...