BAV70C

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION FEATURES Small Package : SOT-23(1). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Reverse Voltage Continuous Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range VR 80 IF 100 IFSM 1 PD 225* Tj 150 Tstg -55 150 * Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm) UNIT V mA A mW BAV70C SILICON EPITAXIAL PLANAR DIODE A G D E L BL 23 1 M 1. ANODE 1 2. ANODE 2 3. CATHODE DIM MILLIMETERS A 2.90+_ 0.1 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 3 21 SOT-23(1) C N K J Marking Type Name H7C Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Voltage Reverse Current Total Capacitance VR VF(1) VF(2) VF(3) IR CT TEST CONDITION IR=100uA IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz MIN. 80 - TYP. - 0.59 0.72 2 MAX. - 0.65 0.8 1.0 1 3 UNIT V V A pF 2015. 5. 12 Revision No : 0 1/2 FORWARD CURRENT I F (mA) BAV70C IF - VF 3 10 2 10 10 C C TaTa=-=2255 Ta=100 C 1 -1 10 -2 10 0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V) 1.2 2.5 2.0 1.5 1.0 0.5 0 0.2 CT - VR f=1MHz Ta=25 C 1 3 10 30 100 200 REVERSE VOLTAGE VR (V) REVERSE CURRENT IR (µA) I R - VR 10 Ta=100 C 1 Ta=75 C -1 10 Ta=50 C -2 10 Ta=25 C -3 10 0 20 40 60 80 REVERSE VOLTAGE VR (V) TOTAL CAPACITANCE C T (pF) 2015. 5. 12 Revision No : ...