BAV23S

SEMICONDUCTOR TECHNICAL DATA High Voltage Switching. FEATURES Low Leakage Current. Repetitive Peak Reverse Voltage : VRRM 250V. Low Capacitance : CT 2pF. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Single diode loaded. Forward Current Double diode loaded. VRM VR IFM IF 250 200 625 225 125 Surge Current (Square wave) t=1 s t = 100 s t = 10ms 9 IFSM 3 1.7 Power Dissipation PD 250* Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Device mounted on a FR4 Printed-Circuit Board (PCB) UNIT V V mA mA A A A mW BAV23S SILICON EPITAXIAL PLANAR DIODE E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. CATHODE 1 2. ANODE 2 3. ANODE 1/ CATHODE 2 3 21 SOT-23 Marking J CType Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage VF Reverse Current Total Capacitance Reverse Recovery Time IR CT trr TEST CONDITION IF=100mA IF=200mA VR=200V VR=200V, Tj=150 VR=0V, f=1MHz IF=10mA, IR=10mA, IRM=1mA MIN. - TYP. - MAX. 1.0 1.25 0.1 100 2 50 UNIT V A pF ns 2010. 11. 23 Revision No : 0 1/2 BAV23S 2010. 11. 23 Revision No : 0 2/2 ...