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RFPA1545 Dataheets PDF



Part Number RFPA1545
Manufacturers RF Micro Devices
Logo RF Micro Devices
Description single-stage GaAs HBT power amplifier
Datasheet RFPA1545 DatasheetRFPA1545 Datasheet (PDF)

RFPA1545 4W P1dB, 5V Linear Power Amplifier 150MHz to 1000MHz RFPA1545 The RFPA1545 is a single-stage GaAs HBT power amplifier specifically designed for high power, high efficiency applications. It is also well-suited for Wireless infrastructure linear driver amplifier applications. The RFPA1545 can be optimized for either linear or saturated operation over sub-bands within 150MHz to 1000MHz. It also offers low noise figure making it an excellent solution for 2nd and 3rd stage LNAs. The RFPA15.

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RFPA1545 4W P1dB, 5V Linear Power Amplifier 150MHz to 1000MHz RFPA1545 The RFPA1545 is a single-stage GaAs HBT power amplifier specifically designed for high power, high efficiency applications. It is also well-suited for Wireless infrastructure linear driver amplifier applications. The RFPA1545 can be optimized for either linear or saturated operation over sub-bands within 150MHz to 1000MHz. It also offers low noise figure making it an excellent solution for 2nd and 3rd stage LNAs. The RFPA1545 exhibits excellent thermal performance through the use of a thermallyenhanced plastic surface-mount slug package. VBIAS 1 NC 2 RFIN 3 RFIN 4 RFIN 5 RFIN 6 AMP 12 VREF 11 NC 10 RFOUT/VCC 9 RFOUT/VCC 8 RFOUT/VCC 7 RFOUT/VCC Functional Block Diagram Ordering Information RFPA1545SQ Sample bag with 25 pieces RFPA1545SR 7" Reel with 100 pieces RFPA1545TR13 13" Reel with 2500 pieces RFPA1545PCK-410 450MHz to 470MHz PCBA with 5-piece sample bag RFPA1545PCK-411 728MHz to 768MHz PCBA with 5-piece sample bag RFPA1545PCK-412 920MHz to 960MHz PCBA with 5-piece sample bag Package: DFN, 12-pin, 4.0mm x 5.0mm Features ■ Flexible Bias for DPD, APD or Uncorrected Linear Applications ■ Uncorrected WCDMA Pout at 25.5dBm, 48dBc ACPR, PAR 10dB at 5V ■ Gain = 17dB at 945MHz ■ Externally Matched for Band Selection ■ VCC = 3V to 7V ■ No Power Supply Sequencing ■ No Negative Supply Voltage Applications ■ Small Cell Base Station, Picocell, Output Power Amplification ■ Driver Amplifier for Commercial Wireless Infrastructure ■ General Purpose Power Amplifier RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS150728 RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 19 Absolute Maximum Ratings Parameter Supply Voltage (VCC and VBIAS) Device Current VREG Current VREG Device Current CW Input Power, 50Ω Load, 460MHz, 748MHz and 940MHz Bands Modulated (WCDMA) Input Power, 6:1 Output VSWR, 460MHz Band Modulated (WCDMA) Input Power, 6:1 Output VSWR, 748MHz and 940MHz Bands Storage Temperature ESD Rating – Human Body Model (HBM) Moisture Sensitivity Level Notes: 1. The maximum ratings must all be met simultaneously. 2. PDISS = PDC+PRFIN-PRFOUT 3. TJ=TL+PDISS*RTH Rating 8.5 2800 10 3.5 30 23 Unit V mA mA V dBm dBm 27 dBm -40 to +150 Class 2 MSL2 °C Recommended Operating Condition Parameter Operating Temperature Range Operating Junction Temperature1 Collector Voltage Specification Min Typ Max -40 +105 160 5 5.5 Note 1: MTTF 1E6 Hours Unit °C °C V Caution! ESD sensitive device. RFMD Green: RoHS status based on EU Directive 2011/65/EU (at time of this document revision), halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Parameter Specification Unit Min Typ Max Condition 450MHz to 470MHz Band Frequency Gain Output IP3 ACPR Output P1dB Input Return Loss Output Return Loss Noise Figure 460 19.5 49 -48.5 35 14 7 5 MHz dB dBm dBc dBm dB dB dB VCC = VBIAS = VREG = 5V, Temp = 25°C, Optimized for ACPR At Rated Power POUT 20dBm per tone, 1MHz spacing RF Output Power = 25.5dBm, WCDMA 3GPP 3.5, test model 1, 64 DPCH RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS150728 RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 2 of 19 RFPA1545 Parameter Input Power (PIN) 728MHz to 768MHz Band Frequency Gain Output IP3 ACPR P1dB Input Return Loss Output Return Loss Noise Figure Input Power (PIN) 920MHz to 960MHz Band Frequency Gain Output IP3 ACPR P1dB Input Return Loss Output Return Loss Noise Figure Input Power (PIN) Power Supply Operating Current (Quiescent) Thermal Resistance Shutdown Leakage Current Specification Unit Min Typ Max Condition 30 dBm Max recommended continuous PIN, VCC = VBIAS = 5V, Load VSWR = 2:1 VCC = VBIAS = VREG = 5V, Temp = 25°C, Optimized for ACPR At Rated Power 750 MHz 17 dB 49 -47.5 dBm dBc POUT 20dBm per tone, 1MHz spacing .


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