WNM4001
Small Signal N-Channel, 20V, 0.5A, MOSFET
V(BR)DSS 20 V
RDS(on) Max.
0.7ȍ@ 4.5V 0.85ȍ@ 2.5V 1.25ȍ@ 1.8V
ID MAX
0.5A 0.3A 0.1A
Descriptions
The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in small sig...
