Document
SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS
FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode.
1.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGSS
DC Drain Current
ID
Drain Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature Range
Tstg
EQUIVALENT CIRCUIT
D
RATING 30 20 200 200 150
-55 150
UNIT V V mA mW
G
KTK5134S
N CHANNEL MOS FIELD EFFECT TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. SOURCE 2. GATE 3. DRAIN
SOT-23
Marking
KDType Name
Lot No.
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time Turn-off Time
IGSS V(BR)DSS
IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss ton toff
TEST CONDITION VGS= 16V, VDS=0V ID=100 A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=0.1mA VDS=3V, ID=50mA ID=50mA, VGS=2.5V VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz
VDD=3V, ID=10mA, VGS=0 2.5V
MIN. 30 0.5
100 -
TYP. 1.2 70 23 58 60
120
MAX. 1 1 1.5 2 -
UNIT A V A V
mS
pF pF pF nS nS
2001. 10. 29
Revision No : 0
1/3
KTK5134S
2001. 10. 29
Revision No : 0
2/3
KTK5134S
2001. 10. 29
Revision No : 0
3/3
.