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KTK5134S Dataheets PDF



Part Number KTK5134S
Manufacturers KEC
Logo KEC
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet KTK5134S DatasheetKTK5134S Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. 1.5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGSS DC Drain Current ID Drain Power Dissipation PD Channel Temperature Tch Storage Temperature Range Tstg EQUIVALENT CIRCUIT D RATING 30 20 200 200 150 -55 150 UNIT V V mA mW G KTK.

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SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. 1.5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGSS DC Drain Current ID Drain Power Dissipation PD Channel Temperature Tch Storage Temperature Range Tstg EQUIVALENT CIRCUIT D RATING 30 20 200 200 150 -55 150 UNIT V V mA mW G KTK5134S N CHANNEL MOS FIELD EFFECT TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. SOURCE 2. GATE 3. DRAIN SOT-23 Marking KDType Name Lot No. S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Gate Leakage Current Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Forward Transfer Admittance Drain-Source ON Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Time Turn-on Time Turn-off Time IGSS V(BR)DSS IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss ton toff TEST CONDITION VGS= 16V, VDS=0V ID=100 A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=0.1mA VDS=3V, ID=50mA ID=50mA, VGS=2.5V VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDD=3V, ID=10mA, VGS=0 2.5V MIN. 30 0.5 100 - TYP. 1.2 70 23 58 60 120 MAX. 1 1 1.5 2 - UNIT A V A V mS pF pF pF nS nS 2001. 10. 29 Revision No : 0 1/3 KTK5134S 2001. 10. 29 Revision No : 0 2/3 KTK5134S 2001. 10. 29 Revision No : 0 3/3 .


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