SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS
FEATURES 2.5 Gate Driv...
SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS
FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode.
1.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage Gate-Source Voltage
VDS VGSS
DC Drain Current
ID
Drain Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature Range
Tstg
RATING 30 20 100 100 150
-55 150
UNIT V V mA mW
EQUIVALENT CIRCUIT
KTK5132V
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time Turn-off Time
IGSS V(BR)DSS
IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss ton toff
TEST CONDITION VGS= 16V, VDS=0V ID=100 A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=0.1mA VDS=3V, ID=10mA ID=10mA, VGS=2.5V VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz
VDD=5V, ID=10mA, VGS=0 5V
2014. 8. 07
Revision No : 1
MIN. 30 0.5 25 -
TYP. 4 8.5 3.3 9.3 50
180
MAX. 1 1 1.5 7 -
UNIT A V A V
mS
pF pF pF nS nS
1/3
KTK5132V
2014. 8. 07
Revision No : 1
2/3
KTK5132V
2014. 8. 07
Revision No : 1
3/3
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