KTK5132U

SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. 1.5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDS VGSS 30 20 DC Drain Current ID 100 Drain Power Dissipation PD * 200 Channel Temperature Tch 150 Storage Temperature Range Tstg -55 150 Note) * Package Mounted On 99.5% Alumina 10 8 0.6 ) UNIT V V mA mW EQUIVALENT CIRCUIT D G KTK5132U N CHANNEL MOS FIELD EFFECT TRANSISTOR A J G E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 C L L HM 0.70 0.42 +_0.10 NK N N 0.10 MIN P 0.1 MAX 1. SOURCE 2. GATE 3. DRAIN USM Marking KBType Name Lot No. S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Gate Leakage Current Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Forward Transfer Admittance Drain-Source ON Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Time Turn-on Time Turn-off Time IGSS V(BR)DSS IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss ton toff TEST CONDITION VGS= 16V, VDS=0V ID=100 A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=0.1mA VDS=3V, ID=10mA ID=10mA, VGS=2.5V VDS=3V, VGS=0V, f=1MHz ...