4.0 AMP SCR
CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2
4.0 AMP SCR 200 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIP...
Description
CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2
4.0 AMP SCR 200 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CS202-4B-2 series type is an epoxy molded silicon controlled rectifier designed for sensing circuit applications and control systems.
MARKING: FULL PART NUMBER
TO-202-2 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) CS202
SYMBOL -4B-2
Peak Repetitive Off-State Voltage
VDRM, VRRM 200
RMS On-State Current (TC=85°C)
IT(RMS)
Peak One Cycle Surge (t=10ms)
ITSM
I2t Value for Fusing (t=10ms)
I2t
Peak Gate Power (tp=20μs) Average Gate Power Dissipation Peak Gate Current (tp=20μs) Critical Rate of Rise of On-State Current
PGM PG(AV)
IGM di/dt
Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance
Tstg TJ ΘJA ΘJC
CS202 -4D-2 400
CS202 -4M-2 600
4.0
30
4.5
3.0
0.2
1.2
50
-40 to +150
-40 to +125
80
7.5
CS202 -4N-2 800
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C
IGT VD=12V, RL=10Ω
20
IH IT=50mA, RGK=1.0KΩ
VGT
VD=12V, RL=10Ω
VTM
ITM=8.0A, tp=380μs
dv/dt
VD=⅔ VDRM, RGK=1.0KΩ, TC=125°C
TYP
38 0.25 0.55 1.6 10
MAX 10 200 200 2.0 0.8 1.8
UNITS V A A A2s W W A
A/μs °C °C °C/W °C/W
UNITS μA μA μA mA V V V/μs
R2 (23-April 2012)
CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2
4.0 AMP SCR 200 THRU 800 VOLTS
TO-202-2 CASE - MECHANICAL OUTLINE
LE...
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