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CS202-4N-2

Central Semiconductor

4.0 AMP SCR

CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2 4.0 AMP SCR 200 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIP...


Central Semiconductor

CS202-4N-2

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CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2 4.0 AMP SCR 200 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS202-4B-2 series type is an epoxy molded silicon controlled rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER TO-202-2 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) CS202 SYMBOL -4B-2 Peak Repetitive Off-State Voltage VDRM, VRRM 200 RMS On-State Current (TC=85°C) IT(RMS) Peak One Cycle Surge (t=10ms) ITSM I2t Value for Fusing (t=10ms) I2t Peak Gate Power (tp=20μs) Average Gate Power Dissipation Peak Gate Current (tp=20μs) Critical Rate of Rise of On-State Current PGM PG(AV) IGM di/dt Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance Tstg TJ ΘJA ΘJC CS202 -4D-2 400 CS202 -4M-2 600 4.0 30 4.5 3.0 0.2 1.2 50 -40 to +150 -40 to +125 80 7.5 CS202 -4N-2 800 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C IGT VD=12V, RL=10Ω 20 IH IT=50mA, RGK=1.0KΩ VGT VD=12V, RL=10Ω VTM ITM=8.0A, tp=380μs dv/dt VD=⅔ VDRM, RGK=1.0KΩ, TC=125°C TYP 38 0.25 0.55 1.6 10 MAX 10 200 200 2.0 0.8 1.8 UNITS V A A A2s W W A A/μs °C °C °C/W °C/W UNITS μA μA μA mA V V V/μs R2 (23-April 2012) CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2 4.0 AMP SCR 200 THRU 800 VOLTS TO-202-2 CASE - MECHANICAL OUTLINE LE...




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