Silicon Tuning Diode
Silicon Tuning Diode • Excellent linearity • Low series resistance • Designed for low tuning voltage operation
for VCO's...
Description
Silicon Tuning Diode Excellent linearity Low series resistance Designed for low tuning voltage operation
for VCO's in mobile communications equipment
Very low capacitance spread Pb-free (RoHS compliant) package
BBY56...
BBY56-02V BBY56-02W BBY56-03W
Type BBY56-02V BBY56-02W* BBY56-03W
* Not for new design
Package SC79 SCD80 SOD323
Configuration single single single
Marking 9 66 red 6
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage Forward current Operating temperature range Storage temperature
VR IF Top TStg
Value 10 20
-55 ...150 -55 ...150
Unit V mA °C
1 2014-02-11
BBY56...
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
VR = 6 V VR = 6 V, TA = 85 °C
IR - -5
- - 100
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz
CT 37 40 43
22 - 25
14.8 15.8 16.8
- 12.1
-
Capacitance ratio
VR = 1 V, VR = 3 V, f = 1 MHz VR = 1 V, VR = 4 V, f = 1 MHz
CT1/CT3
2.15 -
2.53 3.3
-
Series resistance VR = 1 V, f = 470 MHz
rS
- 0.25
-
Unit nA pF
Ω
2 2014-02-11
BBY56...
IR CT TCc
Diode capacitance CT = ƒ (VR) f = 1MHz
100 pF
80 70 60 50 40 30 20 10
00 1 2 3 V 5
VR
Temperature coefficient of the diode capacitance TCc = ƒ (VR) f = 1 MHz
0.0012 1/K
0.001 0.0009 0.0008 0.0007 0.0006 0.0005 0.0004 0.0003 0.0002 0.00010 1 2 3 4 V 6
VR
Rever...
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