BBY56-02V

Silicon Tuning Diode Excellent linearity Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread Pb-free (RoHS compliant) package BBY56... BBY56-02V BBY56-02W BBY56-03W  Type BBY56-02V BBY56-02W* BBY56-03W * Not for new design Package SC79 SCD80 SOD323 Configuration single single single Marking 9 66 red 6 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Operating temperature range Storage temperature VR IF Top TStg Value 10 20 -55 ...150 -55 ...150 Unit V mA °C 1 2014-02-11 BBY56... Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current VR = 6 V VR = 6 V, TA = 85 °C IR - -5 - - 100 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT 37 40 43 22 - 25 14.8 15.8 16.8 - 12.1 - Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz VR = 1 V, VR = 4 V, f = 1 MHz CT1/CT3 2.15 - 2.53 3.3 - Series resistance VR = 1 V, f = 470 MHz rS - 0.25 - Unit nA pF Ω 2 2014-02-11 BBY56... IR CT TCc Diode capacitance CT = ƒ (VR) f = 1MHz 100 pF 80 70 60 50 40 30 20 10 00 1 2 3 V 5 VR Temperature coefficient of the diode capacitance TCc = ƒ (VR) f = 1 MHz 0.0012 1/K 0.001 0.0009 0.0008 0.0007 0.0006 0.0005 0.0004 0.0003 0.0002 0.00010 1 2 3 4 V 6 VR Rever...