Silicon Tuning Diode
Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low...
Description
Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation
for VCO's in mobile communications equipment
Very low capacitance spread Pb-free (RoHS compliant) package
BBY55...
BBY55-02V BBY55-02W BBY55-03W
Type BBY55-02V BBY55-02W BBY55-03W
Package SC79 SCD80 SOD323
Configuration single single single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage Forward current Operating temperature range Storage temperature
VR IF Top Tstg
LS(nH) 0.6
0.6
1.8
Marking 7 77 white 7
Value 16 20
-55 ... 150 -55 ... 150
Unit V mA °C
1 2011-06-15
BBY55...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
VR = 15 V VR = 15 V, TA = 85 °C
IR - -3
- - 100
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 10 V, f = 1 MHz
CT 17.5 18.6 19.6 14 15 16 11.6 12.6 13.6 10 11 12 5.5 6 6.5
Capacitance ratio VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz
CT2/CT10 rS
2 2.5 3 - 0.15 0.4
Unit nA pF
Ω
2 2011-06-15
BBY55...
Diode capacitance CT = ƒ (VR) f = 1MHz
Capacitance change ∆C = ƒ(TA) f = 1 MHz
rs CT
IR ∆C
30 pF
24 22 20 18 16 14 12 10
8 6 4 2 00 2 4 6 8 10 V 14
VR
4 % 1V
2V 2
6V 1 10V
0
-1
-2
-3 ∆C=(C(TA)-C(25°C))/C(25°C)
-4-50 -30 -10 10 30 50 70 °C ...
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