BBY55-02V

Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread Pb-free (RoHS compliant) package BBY55... BBY55-02V BBY55-02W BBY55-03W  Type BBY55-02V BBY55-02W BBY55-03W Package SC79 SCD80 SOD323 Configuration single single single Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Operating temperature range Storage temperature VR IF Top Tstg LS(nH) 0.6 0.6 1.8 Marking 7 77 white 7 Value 16 20 -55 ... 150 -55 ... 150 Unit V mA °C 1 2011-06-15 BBY55... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current VR = 15 V VR = 15 V, TA = 85 °C IR - -3 - - 100 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 10 V, f = 1 MHz CT 17.5 18.6 19.6 14 15 16 11.6 12.6 13.6 10 11 12 5.5 6 6.5 Capacitance ratio VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz CT2/CT10 rS 2 2.5 3 - 0.15 0.4 Unit nA pF Ω 2 2011-06-15 BBY55... Diode capacitance CT = ƒ (VR) f = 1MHz Capacitance change ∆C = ƒ(TA) f = 1 MHz rs CT IR ∆C 30 pF 24 22 20 18 16 14 12 10 8 6 4 2 00 2 4 6 8 10 V 14 VR 4 % 1V 2V 2 6V 1 10V 0 -1 -2 -3 ∆C=(C(TA)-C(25°C))/C(25°C) -4-50 -30 -10 10 30 50 70 °C ...