Silicon Tuning Diode
Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation
for VCO's in mobile c...
Description
Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation
for VCO's in mobile communications equipment
High ratio at low reverse voltage Pb-free (RoHS compliant) package
BBY53...
BBY53-02L BBY53-02V BBY53-02W BBY53-03W
BBY53 BBY53-05W
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Type BBY53 BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-05W
Package SOT23 TSLP-2-1 SC79 SCD80 SOD323 SOT323
Configuration common cathode single, leadless single single single common cathode
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage Forward current Operating temperature range Storage temperature
VR IF Top Tstg
LS(nH) 2 0.4 0.6 0.6 1.8 1.4
Marking S7s LL L LL white 5 S7s
Value 6 20
-55 ... 125 -55 ... 150
Unit V mA °C
1 2011-06-15
BBY53...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
VR = 4 V VR = 4 V, TA = 85 °C
IR - - 10
- - 200
AC Characteristics
Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz
CT CT1/CT3
4.8 5.3 5.8 1.85 2.4 3.1 1.8 2.2 2.6
rS - 0.47 -
Unit nA
pF Ω
2 2011-06-15
TCC CT
∆CT
BBY53...
Diode capacitance CT = ƒ (VR) f = 1MHz
Capacitance change ∆C = ƒ(TA) f = 1 MHz
10 pF
8
7
6
5
4
3
2
1
00 0.5 1 1.5 2 V
3
VR
Temperature coefficient of the diode capacitance TCC = ƒ (VR) f = 1 MHz
10 -2
...
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