CQ202-4M-2

CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2 4.0 AMP TRIAC 200 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ202-4B-2 series type is an epoxy molded silicon triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER TO-202-2 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) CQ202 SYMBOL -4B-2 Peak Repetitive Off-State Voltage VDRM 200 RMS On-State Current (TC=80°C) IT(RMS) Peak Non-Repetitive Surge Current (t=8.3ms) ITSM Peak Non-Repetitive Surge Current (t=10ms) ITSM I2t Value for Fusing (t=10ms) I2t Peak Gate Power (tp=10μs) Average Gate Power Dissipation Peak Gate Current (tp=10μs) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance PGM PG(AV) IGM Tstg TJ ΘJA ΘJC CQ202 -4D-2 400 CQ202 -4M-2 600 4.0 40 35 6.0 3.0 0.2 1.2 -40 to +150 -40 to +125 60 7.5 CQ202 -4N-2 800 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM Rated VDRM, RGK=1.0KΩ IDRM Rated VDRM, RGK=1.0KΩ, TC=125°C IGT VD=12V, QUAD I, II, III IGT VD=12V, QUAD IV IH RGK=1.0KΩ VGT VD=12V, QUAD I, II, III VGT VD=12V, QUAD IV VTM ITM=6.0A, tp=380μs dv/dt VD=⅔ VDRM, TC=125°C 5.0 TYP 6.6 35 5.2 1.1 2.0 1.25 MAX 10 200 20 50 25 1.5 2.5 1.6 UNITS V A A A A2s W W A °C °C °C/W °C/W UNITS μA μA mA mA mA V V V V/μs R2 (23-April 2012) CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2 4.0 AMP...