Nch 20V 10A Middle Power MOSFET
RUS100N02
Nch 20V 10A Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
20V 12mΩ ±10A 2.0W
lFeatures
1) Low on - resista...
Description
RUS100N02
Nch 20V 10A Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
20V 12mΩ ±10A 2.0W
lFeatures
1) Low on - resistance. 2) High Power small mold Package (SOP8). 3) Pb-free lead plating ; RoHS compliant.
lOutline
SOP8
lInner circuit
Datasheet
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
330
lApplication Switching
Type Tape width (mm) Basic ordering unit (pcs)
12 2500
Taping code
TB
Marking
RUS100N02
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature
VDSS ID
ID,pulse*1 VGSS PD*2
Tj Tstg
20 ±10 ±36 ±10 2.0 150 -55 to +150
V A A V W
℃ ℃
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1/11
20141001 - Rev.001
RUS100N02
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Datasheet
Symbol RthJA*2
Values Min. Typ. Max.
- 62.5 -
Unit ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage temperature coefficient
Zero gate voltage drain current
ΔV(BR)DSS ID = 1mA ΔTj referenced to 25℃
IDSS VDS = 20V, VGS ...
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