RS1E240BN

RS1E240BN 　　Nch 30V 40A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 3.2mΩ ±40A 30W lFeatures 1) Low on - resistance. 2) High Power small mold Package (HSOP8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lOutline HSOP8 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Quantity (pcs) 12 2500 Taping code TB Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) RS1E240BN Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current Tc = 25°C Ta = 25°C ID*1 ID ±40 A ±24 A Pulsed drain current IDP*2 ±96 A Gate - Source voltage VGSS ±20 V Avalanche current, single pulse IAS*3 40 A Avalanche energy, single pulse EAS*3 140 mJ Power dissipation PD*1 30 W PD*4 3 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.005 　 　 RS1E240BN 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJC*1 RthJA*4 Values Min. Typ. Max. - - 4.2 - - 41.7 Unit ℃/W ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdow...