RQ5E030AJ

RQ5E030AJ 　　Nch 30V 3A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 75mΩ ±3.0A 1.0W lFeatures 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating ; RoHS compliant lOutline SOT-346T SC-96 TSMT3 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TCL Marking HW lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Operating junction and storage temperature range VDSS ID IDP*2 VGSS IAS*3 EAS*3 PD*4 PD*5 Tj Tstg 30 ±3.0 ±6.0 ±12 3.0 0.69 1.0 0.76 150 -55 to +150 V A A V A mJ W W ℃ ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/11 20160112 - Rev.003 　 　 RQ5E030AJ 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - ambient 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJA*4 RthJA*5 Values Min. Typ. Max. - - 125 - - 165 Unit ℃/W ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown voltage temperature coefficient 　ΔV(BR...