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RF5632

RF Micro Devices

LINEAR POWER AMPLIFIER

RF5632Single 5.0V, 2.3 to 2.7 GHz Linear Power Amplifier RF5632 SINGLE 5.0V, 2.3 TO 2.7 GHZ LINEAR POWER AMPLIFIER Pa...


RF Micro Devices

RF5632

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Description
RF5632Single 5.0V, 2.3 to 2.7 GHz Linear Power Amplifier RF5632 SINGLE 5.0V, 2.3 TO 2.7 GHZ LINEAR POWER AMPLIFIER Package Style: QFN, 24-Pin, 4mmx4mmx0.9mm N/C N/C VBIAS VC1 N/C VC2 24 23 22 21 20 19 Features  34dB Small Signal Gain (Typ.)  High Gain; 34dB  2.5% EVM WiMAX +28.5dBm, 5.0V  2.5% EVM WLAN at 28.5dBm, 5.0 V  Multiple Frequency Ranges  High Efficiency Applications  IEEE 802.11b/g/n WiFi Systems  2.4GHz ISM Band Applications  Commercial and Consumer Systems  WiBro 2.3GHz to 2.4GHz Band Applications  WiFi 2.4GHz to 2.5GHz Band Applications  WiMAX 2.5GHz to 2.7GHz Band Applications N/C 1 18 RF OUT N/C 2 RFIN 3 Input Match N/C 4 Interstage Match Interstage Match 17 RF OUT 16 RFOUT 15 RFOUT N/C 5 VREG1 6 14 N/C Bias Power Detector 13 N/C 7 8 9 10 11 12 VREG2 N/C VREG3 PDET N/C N/C Functional Block Diagram Product Description The RF5632 is a linear power amplifier IC designed specifically for WiMAX or WLAN final or driver stage applications. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process, and is provided in a leadless chip carrier with a backside ground. The RF5632 is designed to maintain linearity over a wide range of temperatures and power outputs. The external match offers tunability for output power over multiple bands. RF5632 features internal input and interstage match, Low Gain mode, and output power detector. DS120213 Optimum Technology Matching® Applied GaAs HBT GaAs MESFET I...




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