SCS220AJ
SiC Schottky Barrier Diode
VR 650V IF 20A QC 31nC
Features 1) Shorter recovery time 2) Reduced temperature dep...
SCS220AJ
SiC
Schottky Barrier Diode
VR 650V IF 20A QC 31nC
Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
Applications ・PFC Boost Topology ・Secondary Side Rectification ・Data Center ・PV Power Conditioners
Outline
LPT(L)
Datasheet
(1)
(2) (3) (4)
Inner circuit
(1)
(1) Cathode (2) N / C (3) Cathode (4) Anode
(2) (3) (4)
Packaging specifications Packaging
Embossed tape
Reel size (mm)
330
Tape width (mm) Type
Basic ordering unit (pcs)
24 1 000
Packing code
TLL
Marking
SCS220AJ
Absolute maximum ratings (Tj = 25°C) Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
VR
Continuous forward current
(Tc= 116°C)
IF
Surge nonrepetitive forward current
PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C
Repetitive peak forward current
IFSM IFRM
i2t value
PW=10ms, Tj=25°C PW=10ms, Tj=150°C
∫i2dt
Total power dissipation
PD
Junction temperature
Tj
Range of storage temperature
Tstg
*1 Tc=100°C, Tj=150°C, Duty cycle=10% *2 Tc=25°C
Value 650 650 20 68 53 260 71 *1 23 14 100*2 175 55 to 175
Unit V V A A A A A A2s A2s W °C °C
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1/5
TSQ50240-SCS220AJ 13.Apr.2018 - Rev.002
SCS220AJ
Datasheet
Electrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
DC blocking voltage
VDC IR =4.0mA
650 -
-
IF=20A,Tj=25°C
- 1.35 1.55
Fo...
