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S6306 Dataheets PDF



Part Number S6306
Manufacturers Rohm
Logo Rohm
Description SiC Schottky Barrier Diode Bare Die
Datasheet S6306 DatasheetS6306 Datasheet (PDF)

S6306 SiC Schottky Barrier Diode Bare Die VR 1200V IF 15A*1 QC 51nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forw.

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S6306 SiC Schottky Barrier Diode Bare Die VR 1200V IF 15A*1 QC 51nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 1200 VR 1200 IF 15*1 65*2 IFSM 240*3 49*4 IFRM 63*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Duty cycle=10%, limited by Tj Unit V V A A A A A °C °C www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/3 2014.05 - Rev.A S6306 Data Sheet lElectrical characteristics (Tj = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. DC blocking voltage VDC IR =0.3mA 1200 - - IF=15A,Tj=25°C - 1.4 1.6 Forward voltage VF IF=15A,Tj=150°C - 1.8 - IF=15A,Tj=175°C - 1.9 - VR=1200V,Tj=25°C - 15 300 Reverse current IR VR=1200V,Tj=150°C - 120 - VR=1200V,Tj=175°C - 195 - Total capacitance VR=1V,f=1MHz C VR=800V,f=1MHz - 790 - 63 - Total capacitive charge Qc VR=800V,di/dt=500A/ms - 51 - Switching time tc VR=800V,di/dt=500A/ms - 18 - Unit V V V V mA mA mA pF pF nC ns www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 2/3 2014.05 - Rev.A S6306 lElectrical characteristic curves Data Sheet Forward Current : IF [A] Fig.1 VF - IF Characteristics 100 Pulsed 10 Ta=175ºC 1 Ta=125ºC 0.1 Ta=75ºC 0.01 Ta=25ºC Ta= -25ºC 0.001 0.0 0.5 1.0 1.5 2.0 Forward Voltage : VF [V] 2.5 Forward Current : IF [A] Fig.2 VF - IF Characteristics 25 Pulsed Ta= -25ºC 20 Ta=25ºC Ta=75ºC 15 10 Ta=125ºC   Ta=175ºC 5 0 0.0 0.5 1.0 1.5 2.0 2.5 Forward Voltage : VF [V] Reverse Current : IR [mA] Fig.3 VR - IR Characteristics 1000 100 Ta=175ºC Ta=125ºC 10 Ta=75ºC Ta=25ºC 1 0.1 0.01 0.001 0 Ta= -25ºC 200 400 600 800 1,000 1,200 Reverse Voltage : VR [V] Capacitance Between Terminals : Ct [pF] Fig.4 VR-Ct Characteristics 10,000 Ta=25ºC f=1MHz 1,000 100 10 0.01 0.1 1 10 100 1000 Reverse Voltage : VR [V] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 3/3 2014.05 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifica- tions : 3) Although ROHM is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe pro.


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