Document
S6306
SiC Schottky Barrier Diode Bare Die
VR 1200V IF 15A*1 QC 51nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lInner circuit
(C)
(A)
Data Sheet
(C) Cathode (A) Anode
lConstruction Silicon carbide epitaxial planer type Schottky diode
lAbsolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value
Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current Junction temperature
VRM 1200
VR 1200
IF 15*1
65*2
IFSM
240*3
49*4
IFRM
63*5
Tj 175
Range of storage temperature
Tstg
-55 to +175
*1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Duty cycle=10%, limited by Tj
Unit V V A A A A A °C °C
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1/3
2014.05 - Rev.A
S6306
Data Sheet
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
DC blocking voltage
VDC IR =0.3mA
1200
-
-
IF=15A,Tj=25°C
- 1.4 1.6
Forward voltage
VF IF=15A,Tj=150°C
- 1.8 -
IF=15A,Tj=175°C
- 1.9 -
VR=1200V,Tj=25°C
- 15 300
Reverse current
IR VR=1200V,Tj=150°C - 120 -
VR=1200V,Tj=175°C - 195 -
Total capacitance
VR=1V,f=1MHz C
VR=800V,f=1MHz
- 790 - 63 -
Total capacitive charge
Qc VR=800V,di/dt=500A/ms - 51 -
Switching time
tc VR=800V,di/dt=500A/ms - 18 -
Unit
V V V V mA mA mA pF pF nC ns
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2/3
2014.05 - Rev.A
S6306 lElectrical characteristic curves
Data Sheet
Forward Current : IF [A]
Fig.1 VF - IF Characteristics
100 Pulsed
10
Ta=175ºC 1
Ta=125ºC 0.1 Ta=75ºC
0.01
Ta=25ºC Ta= -25ºC
0.001 0.0
0.5 1.0 1.5 2.0 Forward Voltage : VF [V]
2.5
Forward Current : IF [A]
Fig.2 VF - IF Characteristics
25 Pulsed Ta= -25ºC
20 Ta=25ºC Ta=75ºC
15
10 Ta=125ºC
Ta=175ºC 5
0 0.0 0.5 1.0 1.5 2.0 2.5 Forward Voltage : VF [V]
Reverse Current : IR [mA]
Fig.3 VR - IR Characteristics
1000
100 Ta=175ºC
Ta=125ºC 10 Ta=75ºC
Ta=25ºC 1
0.1
0.01
0.001 0
Ta= -25ºC 200 400 600 800 1,000 1,200
Reverse Voltage : VR [V]
Capacitance Between Terminals : Ct [pF]
Fig.4 VR-Ct Characteristics
10,000
Ta=25ºC f=1MHz
1,000
100
10 0.01
0.1 1 10 100 1000 Reverse Voltage : VR [V]
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2014.05 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions : 3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe pro.