Rectifying Diode
Rectifier Diode
RRE04EA4D
●Applications General Rectification
●Features 1)Small mold type. (TSMD5) 2)High Reliability.
●...
Description
Rectifier Diode
RRE04EA4D
●Applications General Rectification
●Features 1)Small mold type. (TSMD5) 2)High Reliability.
●Construction Silicon epitaxial planer
Dimensions (Unit : mm)
2.9±0.1 0.4 +-00..105 Eaリchーrドeaとdもhas same dimensions
(5) (4)
0.16±0.1 0.06
2.8±0.2
+0.2 -0.1
1.6
0~0.1
0.3~0.6
(1) (2)
0.95
0.95
1.9±0.2
(3)
0.33±0.03
0.7±0.1 0.85±0.1
1.0Max
ROHM : TSMD5 dot (year week factory)
Taping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
Data Sheet
Land size figure (Unit : mm)
TSMD5 Structure
0.3±0.1
1.75±0.1
3.2±0.08 5.5±0.2
3.5±0.05 8.0±0.2
3.2±0.08
0~0.5
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Repetitive peak reverse voltage Reverse voltage
VRM VR
Average rectified forward current (*1)
Io
Forward current surge peak
Junction temperature Storage temperature (*1) 1/2 x Io at per diode
IFSM
Tj Tstg
Electrical characteristics (Tj=25°C)
Parameter
Symbol
Forward voltage Reverse current * per diode
VF IR
3.2±0.08
4.0±0.1
φ1.1±0.1
Conditions D≤0.5
Direct voltage Glass epoxy substrate mounted
R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
Limits 400 400
0.4
Unit V V
A
2
150 - 55 to +150
A
°C °C
Conditions IF=0.2A VR=400V
Min. Typ. Max. - 0.95 1.1 - 0.01 1
1.1±0.08
Unit V μA
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1/4
2011.09 - Rev.A
RRE04EA4D
Data Sheet
FORWARD CURRENT:IF(A)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1
0.1 0.01
Tj=150°C Tj...
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