DatasheetsPDF.com

RFLA1010

RF Micro Devices

HIGH-LINEARITY AMPLIFIER

RFLA1010 Step Gain, Low Noise, HighLinearity Amplifier 1920MHz to 1980MHz RFLA1010 STEP GAIN, LOW NOISE, HIGH-LINEARIT...


RF Micro Devices

RFLA1010

File Download Download RFLA1010 Datasheet


Description
RFLA1010 Step Gain, Low Noise, HighLinearity Amplifier 1920MHz to 1980MHz RFLA1010 STEP GAIN, LOW NOISE, HIGH-LINEARITY AMPLIFIER 1920MHZ TO 1980MHZ Package Style: MCM 68-Pin, 10mm x 10mm Features  Frequency Range 1920MHz to 1980MHz  Full Internal 50 Matched  Bypass Mode of LNA for High Dynamic Range  Max Gain = 29dB  Noise Figure of 1.5dB Typical  High IIP3 = -10dBm  Single +3V Supply Applications  3G, 4G Cellular Base Station  MIMO LNA  Remote Radio Head LNA  Active Antenna LNA RF1in RF2in RF3in RF4in 4 Path LNA 1920 to 1980MHz LNA1 SAW Filter LNA2 RF1out RF2out RF3out RF4out SEL1_1 SEL2_1 SEL3_1 SEL4_1 SEL1_2 SEL2_2 SEL3_2 SEL4_2 Functional Block Diagram Product Description RFMD's RFLA1010 is a four-path, low noise amplifier module with integrated RX band filter. Each LNA can be bypassed to provide higher dynamic range. The RFLA1010 has very low power consumption, with each LNA path drawing only 10mA from a 3V supply. It is packaged in a highly integrated 10mm x 10mm, multiple-chip module (MCM) that is internally matched to 50. DS111121 Ordering Information RFLA1010SR RFLA1010SQ RFLA1010TR7 RFLA1010TTR13 RFLA1010PCK-410 7" Reel with 100 pieces Sample Bag with 25 pieces 7" Reel with 500 pieces 13" Reel with 1500 pieces 1920MHz to 1980MHz PCBA with 5-piece sample bag Optimum Technology Matching® Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS BiFET HBT InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)