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BFP840ESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Description
BFP840ESD Robust Low Noise Silicon Germanium Bipolar RF
Transistor
Data Sheet Revision 1.2, 2013-03-28 RF & Protection Devices Edition 2013-03-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee...
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BFP840ESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
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