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DMP56D0UV Dataheets PDF



Part Number DMP56D0UV
Manufacturers Diodes
Logo Diodes
Description Dual P-Channel MOSFET
Datasheet DMP56D0UV DatasheetDMP56D0UV Datasheet (PDF)

DMP56D0UV DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -50V RDS(ON) 6Ω @ VGS = -4V 8Ω @ VGS = -2.5V ID TA = +25°C -160mA -120mA Descriptions and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  DC-DC converters  Power management functions  Battery operated systems and solid-state relays Features and Benefits  .

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DMP56D0UV DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -50V RDS(ON) 6Ω @ VGS = -4V 8Ω @ VGS = -2.5V ID TA = +25°C -160mA -120mA Descriptions and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  DC-DC converters  Power management functions  Battery operated systems and solid-state relays Features and Benefits  Low On-Resistance  ESD Protected Gate  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Package: SOT563  Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish  Matte Tin annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.006 grams (Approximate) SOT563 D2 G1 S1 ESD PROTECTED TOP VIEW S2 G2 D1 TOP VIEW Internal Schematic Ordering Information (Note 4) Notes: Part Number DMP56D0UV-7 DMP56D0UV-13 Package SOT563 SOT563 Qty. 3000 10000 Packing Carrier Tape & Reel Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. DMP56D0UV Document number: DS36174 Rev. 4 - 2 1 of 6 www.diodes.com March 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. DMP56D0UV Marking Information KD3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: J = 2022) M = Month (ex: 3 = March) Date Code Key Year Code Month Code 2013 A Jan 1 … 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 … J K L M N O P R S T Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2 3 4 5 6 7 8 9 O N D Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) Continuous Pulsed Drain Current (10µs pulse, duty cycle = 1%) Symbol VDSS VGSS ID IDM Value -50 8 -160 -700 Units V V mA mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Value 400 313 -55 to +150 Units mW C/W C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 4.5V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol Min Typ Max BVDSS -50   IDSS   -10 IGSS   1 VGS(TH) -0.5  -1.2 RDS(ON)   4.6 6.0 6 8 Yfs 100   VSD  -0.8 -1.2 Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf  50.54   3.49   2.42   201   0.58   0.09   0.14   4.46   6.63   21.9   15.0  Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. Unit Test Condition V VGS = 0V, ID = -250µA µA VDS = -50V, VGS = 0V µA VGS = 8V, VDS = 0V V VDS = VGS, ID = -250µA Ω VGS = -4V, ID = -100mA VGS = -2.5V, ID = -80mA mS VDS = -5V, ID = -100mA V VGS = 0V, IS = -100mA pF pF VDS = -25V, VGS = 0V, f = 1.0MHz pF Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC nC VDS = -25V, ID = -100mA nC ns ns VDD = -30V, ID = -0.27A, VGEN = -4V, ns RGEN = 6Ω ns DMP56D0UV Document number: DS36174 Rev. 4 - 2 2 of 6 www.diodes.com March 2022 © 2022 Copyright Diodes Incorporated. All Rights Reser.


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