Document
DMP56D0UV
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -50V
RDS(ON)
6Ω @ VGS = -4V 8Ω @ VGS = -2.5V
ID TA = +25°C
-160mA -120mA
Descriptions and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
DC-DC converters Power management functions Battery operated systems and solid-state relays
Features and Benefits
Low On-Resistance ESD Protected Gate Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
Mechanical Data
Package: SOT563 Package Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (Approximate)
SOT563
D2
G1
S1
ESD PROTECTED
TOP VIEW
S2
G2
D1
TOP VIEW Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMP56D0UV-7 DMP56D0UV-13
Package
SOT563 SOT563
Qty. 3000 10000
Packing Carrier
Tape & Reel Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
DMP56D0UV
Document number: DS36174 Rev. 4 - 2
1 of 6 www.diodes.com
March 2022
© 2022 Copyright Diodes Incorporated. All Rights Reserved.
DMP56D0UV
Marking Information
KD3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: J = 2022) M = Month (ex: 3 = March)
Date Code Key Year Code
Month Code
2013 A
Jan 1
…
2022 2023 2024 2025 2026 2027 2028 2029 2030 2031
…
J
K
L
M
N
O
P
R
S
T
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
2
3
4
5
6
7
8
9
O
N
D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current (Note 5)
Continuous
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Symbol VDSS VGSS ID IDM
Value -50 8 -160 -700
Units V V mA mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range
Symbol PD RJA
TJ, TSTG
Value 400 313
-55 to +150
Units mW C/W C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 4.5V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Symbol Min Typ Max
BVDSS -50
IDSS
-10
IGSS
1
VGS(TH) -0.5 -1.2
RDS(ON)
4.6 6.0
6 8
Yfs 100
VSD
-0.8 -1.2
Ciss Coss Crss RG Qg Qgs Qgd tD(on)
tr tD(off)
tf
50.54 3.49 2.42 201 0.58 0.09 0.14 4.46 6.63 21.9 15.0
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing.
Unit
Test Condition
V VGS = 0V, ID = -250µA µA VDS = -50V, VGS = 0V µA VGS = 8V, VDS = 0V
V VDS = VGS, ID = -250µA Ω VGS = -4V, ID = -100mA
VGS = -2.5V, ID = -80mA mS VDS = -5V, ID = -100mA V VGS = 0V, IS = -100mA
pF pF VDS = -25V, VGS = 0V, f = 1.0MHz pF Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC nC VDS = -25V, ID = -100mA nC ns ns VDD = -30V, ID = -0.27A, VGEN = -4V, ns RGEN = 6Ω ns
DMP56D0UV
Document number: DS36174 Rev. 4 - 2
2 of 6 www.diodes.com
March 2022
© 2022 Copyright Diodes Incorporated. All Rights Reser.