ADVANCE INFORMATION
Product Summary
V(BR)DSS -30V
RDS(on) Max
2.4Ω @ VGS = -10V 4Ω @ VGS = -4.5V
ID Max @TA = +25C
-300mA
-250mA
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
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