Document
NEW PRODUCT
Product Summary
V(BR)DSS 20V
RDS(ON) max
55mΩ @ VGS = 4.5V 70mΩ @ VGS = 2.5V 90mΩ @ VGS = 1.8V 130mΩ @ VGS = 1.5V
ID max TA = 25°C
4.0A 3.5A 3.1A 2.5A
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
• General Purpose Interfacing Switch • Power Management Functions
DMN2100UDM
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT26 • Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 • Weight: 0.015 grams (approximate)
SOT26
DD
S
ESD PROTECTED
Top View
DD G
Top View Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number DMN2100UDM-7
Case SOT26
Packaging 3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com..
Marking Information
2N1
YM
2N1 = Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September)
Date Code Key
Year
2007
Code
U
Month Code
Jan 1
2008 V
Feb 2
2009 W
Mar 3
2010 X
Apr 4
2011 Y
2012 Z
2013 A
May Jun 56
Jul Aug 78
2014 B
Sep 9
2015 C
Oct O
2016 D
Nov N
2017 E
Dec D
DMN2100UDM
Document number: DS31186 Rev. 5 - 2
1 of 6 www.diodes.com
May 2012
© Diodes Incorporated
DMN2100UDM
NEW PRODUCT
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 4.5V
Steady State
t<10s
Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current
TA = 25°C TA = 70°C TA = 25°C TA = 70°C
Symbol VDSS VGSS
ID
ID
IDM IS
Value 20 ±8
4.0 3.1
4.5 3.5
13 1.5
Units V V
A
A
A A
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range
TA = 25°C TA = 70°C Steady state
t<10s
TA = 25°C TA = 70°C Steady state
t<10s
Symbol PD
RθJA
PD
RθJA RθJC TJ, TSTG
Value 1 0.6
127 91 1.5 0.9 85 63 3.1
-55 to +150
Units W
°C/W W
°C/W °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Symbol Min Typ Max Unit
Test Condition
BVDSS 20 ⎯ ⎯
IDSS
⎯⎯
1
IGSS
⎯ ⎯ ±1
V VGS = 0V, ID = 250μA μA VDS = 20V, VGS = 0V μA VGS = ±8V, VDS = 0V
VGS(th) 0.6 ⎯ 1.0
V VDS = VGS, ID = 250μA
⎯ 32 55
VGS = 4.5V, ID = 6A
RDS (ON)
⎯ ⎯
43 56
70 90
mΩ VGS = 2.5V, ID = 4.0A VGS = 1.8V, ID = 1.5A
⎯ 80 130
VGS = 1.5V, ID = 1.0A
|Yfs| ⎯ 8 ⎯ S VDS =10V, ID = 6A
VSD ⎯ 0.7 1.1 V VGS = 0V, IS = 2A
Ciss Coss Crss Qg Qgs Qgd tD(on)
tr tD(off)
tf
⎯ 555 ⎯ ⎯ 112 ⎯ ⎯ 84 ⎯ ⎯ 8.8 ⎯ ⎯ 1.4 ⎯ ⎯3⎯ ⎯ 53 ⎯ ⎯ 78 ⎯ ⎯ 561 ⎯ ⎯ 234 ⎯
pF
pF
VDS = 10V, VGS = 0V f = 1.0MHz
pF
nC nC VDS = 10V, VGS = 4.5V, nC ID = 6.5A
ns
ns VDS = 10V, ID = 1.0A ns VGS = 4.5V, RG = 6Ω
ns
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect 8. Guaranteed by design. Not subject to production testing
DMN2100UDM
Document number: DS31186 Rev. 5 - 2
2 of 6 www.diodes.com
May 2012
© Diodes Incorporated
DMN2100UDM
NEW PRODUCT
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
10
VGS = 8.0V
8 VGS = 2..