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DMN2100UDM Dataheets PDF



Part Number DMN2100UDM
Manufacturers Diodes
Logo Diodes
Description N-Channel MOSFET
Datasheet DMN2100UDM DatasheetDMN2100UDM Datasheet (PDF)

NEW PRODUCT Product Summary V(BR)DSS 20V RDS(ON) max 55mΩ @ VGS = 4.5V 70mΩ @ VGS = 2.5V 90mΩ @ VGS = 1.8V 130mΩ @ VGS = 1.5V ID max TA = 25°C 4.0A 3.5A 3.1A 2.5A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions DMN2100UDM N-CHANNEL ENHANCEME.

  DMN2100UDM   DMN2100UDM



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NEW PRODUCT Product Summary V(BR)DSS 20V RDS(ON) max 55mΩ @ VGS = 4.5V 70mΩ @ VGS = 2.5V 90mΩ @ VGS = 1.8V 130mΩ @ VGS = 1.5V ID max TA = 25°C 4.0A 3.5A 3.1A 2.5A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions DMN2100UDM N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT26 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.015 grams (approximate) SOT26 DD S ESD PROTECTED Top View DD G Top View Internal Schematic Ordering Information (Note 4) Notes: Part Number DMN2100UDM-7 Case SOT26 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.  3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com.. Marking Information 2N1 YM 2N1 = Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) Date Code Key Year 2007 Code U Month Code Jan 1 2008 V Feb 2 2009 W Mar 3 2010 X Apr 4 2011 Y 2012 Z 2013 A May Jun 56 Jul Aug 78 2014 B Sep 9 2015 C Oct O 2016 D Nov N 2017 E Dec D DMN2100UDM Document number: DS31186 Rev. 5 - 2 1 of 6 www.diodes.com May 2012 © Diodes Incorporated DMN2100UDM NEW PRODUCT Maximum Ratings @TA = 25°C unless otherwise specified Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current TA = 25°C TA = 70°C TA = 25°C TA = 70°C Symbol VDSS VGSS ID ID IDM IS Value 20 ±8 4.0 3.1 4.5 3.5 13 1.5 Units V V A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Total Power Dissipation (Note 5) Characteristic Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range TA = 25°C TA = 70°C Steady state t<10s TA = 25°C TA = 70°C Steady state t<10s Symbol PD RθJA PD RθJA RθJC TJ, TSTG Value 1 0.6 127 91 1.5 0.9 85 63 3.1 -55 to +150 Units W °C/W W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol Min Typ Max Unit Test Condition BVDSS 20 ⎯ ⎯ IDSS ⎯⎯ 1 IGSS ⎯ ⎯ ±1 V VGS = 0V, ID = 250μA μA VDS = 20V, VGS = 0V μA VGS = ±8V, VDS = 0V VGS(th) 0.6 ⎯ 1.0 V VDS = VGS, ID = 250μA ⎯ 32 55 VGS = 4.5V, ID = 6A RDS (ON) ⎯ ⎯ 43 56 70 90 mΩ VGS = 2.5V, ID = 4.0A VGS = 1.8V, ID = 1.5A ⎯ 80 130 VGS = 1.5V, ID = 1.0A |Yfs| ⎯ 8 ⎯ S VDS =10V, ID = 6A VSD ⎯ 0.7 1.1 V VGS = 0V, IS = 2A Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ 555 ⎯ ⎯ 112 ⎯ ⎯ 84 ⎯ ⎯ 8.8 ⎯ ⎯ 1.4 ⎯ ⎯3⎯ ⎯ 53 ⎯ ⎯ 78 ⎯ ⎯ 561 ⎯ ⎯ 234 ⎯ pF pF VDS = 10V, VGS = 0V f = 1.0MHz pF nC nC VDS = 10V, VGS = 4.5V, nC ID = 6.5A ns ns VDS = 10V, ID = 1.0A ns VGS = 4.5V, RG = 6Ω ns Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect 8. Guaranteed by design. Not subject to production testing DMN2100UDM Document number: DS31186 Rev. 5 - 2 2 of 6 www.diodes.com May 2012 © Diodes Incorporated DMN2100UDM NEW PRODUCT ID, DRAIN CURRENT (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 10 VGS = 8.0V 8 VGS = 2..


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