2N5064

2N5060 THRU 2N5064 SILICON CONTROLLED RECTIFIERS 0.8 AMP, 30 THRU 200 VOLT w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR 2N5060 series devices are epoxy molded SCRs designed for control systems and sensing circuit applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N5060 2N5061 2N5062 2N5063 2N5064 UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 30 60 100 150 200 V RMS On-State Current (Note 1; TC=80°C) IT(RMS) 0.8 A Average On-State Current (Note 1; TC=67°C) IT(AV) 0.51 A Average On-State Current (Note 1; TC=102°C) IT(AV) 0.255 A Peak One Cycle Surge Current (60Hz) ITSM 10 A I2t Value for Fusing (t=8.3ms) I2t 0.4 A2s Peak Forward Gate Power (tp<1.0μs) PGM 0.1 Average Forward Gate Power (t=8.3ms) PG(AV) 0.01 Peak Forward Gate Current (tp<1.0μs) IGM 1.0 Peak Reverse Gate Voltage (tp<1.0μs) VRGM 5.0 Operating Junction Temperature TJ -40 to +125 Storage Temperature Tstg -40 to +150 Thermal Resistance (Note 2) ΘJC 75 Thermal Resistance ΘJA 200 Notes: 1) 180° Conduction Angles 2) Measured with the “flat side down” on a heatsink and held in position by a metal clamp over the curved surface. W W A V °C °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM VD=Rated VDRM, RGK=1.0kΩ 10 μA IDRM, IRRM VD=Rated VDRM, RGK=1.0kΩ, TC=110°C 50 μA IGT VD=7.0V, RL=100Ω 200 μA IGT VD=7.0V, ...