Document
STI360N4F6, STP360N4F6
Automotive-grade N-channel 40 V, 1.46 mΩ typ., 120 A STripFET™ F6 Power MOSFETs in I²PAK and TO-220 packages
Datasheet - production data
Features
TAB
TAB
123
I²PAK
3 2 1
TO-220
Figure 1. Internal schematic diagram
'7$%
* 6
Order codes STI360N4F6 STP360N4F6
VDS 40 V
RDS(on) max.
ID
1.8 mΩ
120 A
• Designed for automotive applications and AEC-Q101 qualified
• Very low on-resistance • Low gate charge • High avalanche ruggedness • Low gate drive power loss
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
$0Y
Order codes STI360N4F6 STP360N4F6
Table 1. Device summary
Marking
Packages
360N4F6
I²PAK TO-220
December 2015
This is information on a product in full production.
DocID023419 Rev 2
Packing Tube
1/14
www.st.com
Contents
Contents
STI360N4F6, STP360N4F6
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
............................ 6
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 I²PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2 TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
DocID023419 Rev 2
STI360N4F6, STP360N4F6
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VDS Drain-source voltage
VGS Gate-source voltage
ID(1)(2) IDM(1)
Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Tstg Storage temperature
Tj
Operating junction temperature
1. Current limited by package.
2. Pulse width is limited by safe operating area.
40 ±20 120 120 480 300
- 55 to 175
Symbol
Table 3. Thermal data Parameter
Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max
Value 0.5 62.5
Unit V V A A W °C
Unit °C/W
DocID023419 Rev 2
3/14
14
Electrical characteristics
2
Electrical characteristics
STI360N4F6, STP360N4F6
(TCASE = 25 °C unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-source breakdown voltage
Zero gate voltage IDSS Drain current
IGSS
Gate-body leakage current
VGS(th) RDS(on)
Gate threshold voltage
Static drain-source on-resistance
Table 4. Static Test conditions
VGS = 0 V, ID = 250 µA VGS = 0 V, VDS = 40 V VGS = 0 V, VDS = 40 V, TC=125 °C
VDS = 0 V, VGS = ± 0 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 60 A
Min. Typ. Max. Unit
40
V
1 µA
100 µA
± 100 nA
3
4.5 V
1.46 1.8 mΩ
Symbol
Parameter
Ciss Coss
Crss
Qg Qgs Qgd
Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge
Table 5. Dynamic Test conditions
VDS = 25 V, f = 1 MHz, VGS = 0 V
Min. Typ. Max. Unit
- 17800 -
-
1750
-
pF
- 1305 -
VDD = 20 V, ID = 120 A,
-
304
-
VGS = 10 V (see Figure 14: -
96
- nC
Gate charge test circuit)
-
87
-
Symbol
Parameter
td(on) tr
td(off)
Turn-on delay time Rise time Turn-off-delay time
tf
Fall time
Table 6. Switching times
Test conditions
VDD = 20 V, ID = 60 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: Switching times test circuit for resistive load and Figure 18: Switching time waveform)
Min. Typ. Max. Unit
-
64
-
-
182
-
-
240
-
ns
-
130
-
4/14
DocID023419 Rev 2
STI360N4F6, STP360N4F6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD(1) Source-drain current
-
ISDM(1) Source-drain current (pulsed)
-
VSD (2) Forward on voltage
ISD = 120 A, VGS = 0 V -
trr
Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 120 A, VDD = 32 V -
di/dt = 100 A/µs,
-
Tj = 25 °C (see
Figure 15: Test circuit
for inductive load
-
switching and diode
recovery times)
120 A
480 A
1.3 V
44
ns
47
nC
2.1
A
1. Current limited by package 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID023419 Rev 2
5/14
14
Electrical characteristics
STI360N4F6, STP360N4F6
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
,'
*,3*'-362$
$
2SOHLPUDLWWHLRGQELQ\WPKLDV[DU5HD'6LVRQ
V PV
Figure 3. Thermal impedance
.
*,3*'-3=7+
PV
7.