STP360N4F6

STI360N4F6, STP360N4F6 Automotive-grade N-channel 40 V, 1.46 mΩ typ., 120 A STripFET™ F6 Power MOSFETs in I²PAK and TO-220 packages Datasheet - production data Features TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$% * 6 Order codes STI360N4F6 STP360N4F6 VDS 40 V RDS(on) max. ID 1.8 mΩ 120 A Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. $0Y Order codes STI360N4F6 STP360N4F6 Table 1. Device summary Marking Packages 360N4F6 I²PAK TO-220 December 2015 This is information on a product in full production. DocID023419 Rev 2 Packing Tube 1/14 www.st.com Contents Contents STI360N4F6, STP360N4F6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . ...