Document
STH245N75F3-6
Automotive-grade N-channel 75 V, 2.6 mΩ typ., 180 A STripFET™ F3 Power MOSFET in a H²PAK-6 package
Datasheet - production data
Features
TAB
1
H2PAK-6
7
Figure 1. Internal schematic diagram
Order code STH245N75F3-6
VDS 75 V
RDS(on) max. ID 3.0 mΩ 180 A
• Designed for automotive applications and AEC-Q101 qualified
• Conduction losses reduced
• Low profile, very low parasitic inductance
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
Order code STH245N75F3-6
Table 1. Device summary
Marking
Packages
245N75F3
H2PAK-6
Packaging Tape and reel
July 2014
This is information on a product in full production.
DocID026268 Rev 2
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www.st.com
Contents
Contents
STH245N75F3-6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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STH245N75F3-6
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VDS Drain-source voltage
VGS ID (1)
Gate-source voltage Drain current (continuous) at TC = 25 °C
ID IDM(2)
Drain current (continuous) at TC = 100 °C Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
EAS (3) Single pulse avalanche energy
Tstg Storage temperature
Tj Operating junction temperature
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Starting Tj = 25 °C, ID = 60 A, VDD = 15 V.
75 ± 20 180 170 720 300
2 600
-55 to 175
Symbol
Table 3. Thermal data Parameter
Rthj-case Thermal resistance junction-case max Rthj-pcb (1) Thermal resistance junction-pcb max
1. When mounted on 1 inch2 FR-4 2 oz Cu.
Value 0.5 35
Unit V V A A A W
W/°C mJ °C
Unit °C/W °C/W
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Electrical characteristics
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states Test conditions
V(BR)DSS
Drain-source breakdown voltage
VGS= 0, ID = 250 µA
IDSS
Zero gate voltage drain current
IGSS
Gate body leakage current
VGS= 0, VDS = 75 V VGS= 0, VDS = 75 V, TC =125 °C
VDS = 0, VDS = ± 20 V
VGS(th) RDS(on)
Gate threshold voltage VDS= VGS, ID = 250 µA
Static drain-source on-resistance
VGS= 10 V, ID= 90 A
STH245N75F3-6
Min. Typ. Max. Unit 75 V
10 µA 100 µA ±200 nA 2 4V 2.6 3.0 mΩ
Symbol
Parameter
Ciss Coss
Crss
Qg Qgs Qgd
Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge
Table 5. Dynamic
Test conditions
Min.
VGS =0, VDS = 25 V, f = 1 MHz
-
-
Typ. 6800 1100
50
Max. Unit - pF - pF
- pF
VDD= 37.5 V, ID= 120 A, VGS= 10 V (see Figure 14)
- 87 - nC - 30 - nC - 26 - nC
Symbol
Parameter
td(on) tr
td(off) tf
Turn-on delay time Rise time Turn-off delay time Fall time
Table 6. Switching times Test conditions
VDD = 37.5 V, ID = 60 A RG= 4.7 Ω, VGS= 10 V, (see Figure 13)
Min. -
Typ. 25 70 100 15
Max. Unit - ns - ns - ns - ns
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STH245N75F3-6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
- 180 A
ISD (1) Source-drain current (pulsed)
- 720 A
VSD (2) Forward on voltage
VGS = 0, ISD = 120 A
-
1.5 V
trr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
ISD = 120 A,di/dt = 100 A/µs -
80
VDD = 30 V, Tj = 150 °C
- 180
(see Figure 15)
- 4.5
ns nC A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
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Electrical characteristics
STH245N75F3-6
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
ID (A)
100
OpLeimraittieodn
in by
tmhiasxaRreDaS(iosn)
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100µs
Figure 3. Thermal impedance
10
1
0.1 0.1
1ms
10ms
Tj=175°C Tc=25°C Single pulse
1 10 VDS(V)
Figure 4. Output characteristics
ID(A) 350
VGS=10V
AM05545v1
300 250 6V
200 150
100
50
0 0
1234
5V 5 VDS(V)
Figure 5. Transfer characteristics
,' +9 $
9'6 9
9*69
Figure 6. Normalized V(BR)DSS vs temperature
Figure 7. Static drain-source on-resistance
RDS(on) (mΩ)
2.90
VGS=10V
AM08148v1
2.