IRG4PSH71UD

PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast Copack IGBT ULTRAFAST SOFT RECOVERY DIODE Features UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 Creepage distance increased to 5.35mm Benefits Generation 4 IGBT's offer highest efficiencies available Maximum power density, twice the power handling of the TO-247, less space than TO-264 IGBTs optimized for specific application conditions Cost and space saving in designs that require multiple, paralleled IGBTs HEXFREDTM antiparallel Diode minimizes switching losses and EMI Absolute Maximum Ratings C G E n-channel VCES = 1200V VCE(on) typ. = 2.52V @VGE = 15V, IC = 50A SUPER - 247 Parameter Max. Units VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C ICM ILM Continuous Collector Current ÙPulse Collector Current dClamped Inductive Load current VGE Gate-to-Emitter Voltage IF @ Tc = 100°C Diode Continuous Forward Current IFM Diode Maximum Forward Current PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature R...