2SD2118

Elektronische Bauelemente 2SD2118 5A , 50V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB = 4A / 0.1A) Excellent DC Current Gain Characteristics D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SD2118-Q Range 120~270 2SD2118-R 180~390 A BC D PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch Collector 2 1 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous Collector Power Dissipation Junction and Storage Temperature Range VCBO VCEO VEBO IC PC TJ ,TSTG 50 20 6 5 1 150 , -55~150 GE K HF MJ N O P Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.35 6.8 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Collector-base breakdown voltage V(BR)CBO 50 - - Collector-emitter breakdown voltage V(BR)CEO 20 - - Emitter-base breakdown voltage V(BR)EBO 6 - - Collector cut-off current ICBO - - 0.5 Emitter cut-off current IEBO - - 0.5 DC current gain hFE 120 - 390 Collector-emitter saturation voltage VCE(sat) - - 1 Transition frequ...