RF38553.1 V Linear Power Amplifier
RF3855
3.1V LINEAR POWER AMPLIFIER
Package Style: QFN, 16-Pin, 4 x 4
GND RF IN NC...
RF38553.1 V Linear Power Amplifier
RF3855
3.1V LINEAR POWER AMPLIFIER
Package Style: QFN, 16-Pin, 4 x 4
GND RF IN NC NC NC
Features
Single 3.1V Supply
Applications
L-BAND SATCOM Applications
1 16 15 14 13
VPD1 2
12 VCC1
MODE 3
11 VCC1
VPD2 4
10 VCC
56789
GND NC
RF OUT RF OUT
GND
Functional Block Diagram
Product Description
The RF3855 is a high-power, high-efficiency linear amplifier IC targeting LBAND SATCOM Applications. The device is manufactured on an advanced Gallium Arsenide process, and has been designed for use as the final RF amplifier applications in the 1611MHz to 1618MHz band. The package is a 4mmx4mm, 16-pin QFN plastic package with backside ground.
Ordering Information
RF3855
3.1V Linear Power Amplifier
DS110914
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or
[email protected].
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RF3855
Absolute Maximum Ratings Parameter
Supp...