RBR1L40A

Schottky Barrier Diode RBR1L40A lApplication General rectification lDimensions (Unit : mm) 2.6±0.15 Data Sheet lLand Size Figure (Unit : mm) 2.0 4.5±0.2 1.2±0.3 5.0±0.3 2.0 4.2 lFeatures 1) Small power mold type (PMDS) 2) High reliability 3) Low VF 12 1.5±0.2 0.1±0.02 2.0±0.2 PMDS lStructure Cathode ROHM : PMDS JEDEC : SOD-106 1 2 : Manufacture Date lConstruction lTaping Dimensions (Unit : mm) Silicon epitaxial planar type 2.0±0.05 4.0±0.1 fφ 1.55±0.05 Anode 0.3 5.3±0.1 　 0.05 9.5±0.1 5.5±0.05 1.75±0.1 12±0.2 2.9±0.1 4.0±0.1 fφ 1.55 2.8MAX lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 40 V Reverse voltage VR Direct reverse voltage Average forward rectified current Non-repetitive forward current surge peak Io IFSM Glass epoxy board mounted, 60Hz half sin wave, resistive load , Tc=131ºC Max. 60Hz half sin wave, one cycle, non-repetitive at Ta=25ºC Operating junction temperature Tj - 40 1 30 150 V A A °C Storage temperature Tstg - -55 to +150 °C lElectrical Characteristics (Tj= 25°C) Parameter Symbol Forward voltage VF Reverse current IR Conditions IF=1.0A VR=40V Min. Typ. Max. Unit - - 0.52 V - - 50 mA www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/5 2015.03 - Rev.A RBR1L40A lElectrical Characteristic Curves Data Sheet FORWARD CURRENT : IF (A) 10 Tj = 150°C 1 0.1 Tj = 125°C Tj = 75°C Tj = 25°C 0.01 0 Tj = -25°C 200 400 600 800 10...