RB550VAM-30

RB550VAM-30 Schottky Barrier Diode 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VR 30 V Io 1 A IFSM 5 A ●Features High reliability Small mold type Low VF ●Inner Circuit Data sheet 　　　 　 　 　 　 　 　 　 　 　　　 ●Application ●Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 ●Structure Taping Width(mm) Basic Ordering Unit(pcs) 8 3000 Silicon epitaxial planar Taping Code TR Marking S ●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage Reverse voltage Average rectified forward current VRM VR Io Duty≦0.5 Reverse direct voltage Glass epoxy mounted、 60Hz half sin waveform、resistive load、 Tc=100℃ Max. 30 30 1 V V A Peak forward surge current IFSM 60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃ 5 A Junction temperature(1) Tj - Storage temperature Tstg - Note(1) To avoid occurrence of thermal runaway， actual board is to be designed to fulfill dPd/dTj<1/Rth(j-a). 150 -55 ～ 150 ℃ ℃ ●Characteristics (Tj=25ºC unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage Reverse current VF1 IF=0.7A - 0.45 0.49 V VF2 IF=1.0A - 0.48 0.52 V IR VR=10V - 1 30 μA Attention 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2016 ROHMCo., Ltd.All rights reserved. 1/5 　 2017/05/16_Rev.001 RB550VAM-30 ●Characteristic Curves ...