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RB530CM-60 Dataheets PDF



Part Number RB530CM-60
Manufacturers Rohm
Logo Rohm
Description Schottky Barrier Diode
Datasheet RB530CM-60 DatasheetRB530CM-60 Datasheet (PDF)

Schottky Barrier Diode RB530CM-60 lApplication General rectification lDimensions (Unit : mm) 0.37±0.05 (1) Data Sheet lLand Size Figure (Unit : mm) 0.55 0.86±0.05 1.00±0.05 (0.26±0.05) 0.45 0.5 lFeatures 1) Small mold type (VMN2M) 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type 0~0.10 (2) 0.22±0.05 0.60±0.05 0.16±0.05 ROHM : VMN2M : Manufacture year/ week/ factory lTaping Dimensions (Unit : mm) f1.55±0.05 4.0±0.05 2.0±0.05 1.75±0.1 VMN2M (1) Cathode lStruct.

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Schottky Barrier Diode RB530CM-60 lApplication General rectification lDimensions (Unit : mm) 0.37±0.05 (1) Data Sheet lLand Size Figure (Unit : mm) 0.55 0.86±0.05 1.00±0.05 (0.26±0.05) 0.45 0.5 lFeatures 1) Small mold type (VMN2M) 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type 0~0.10 (2) 0.22±0.05 0.60±0.05 0.16±0.05 ROHM : VMN2M : Manufacture year/ week/ factory lTaping Dimensions (Unit : mm) f1.55±0.05 4.0±0.05 2.0±0.05 1.75±0.1 VMN2M (1) Cathode lStructure (2) Anode 0.2±0.05 1.1±0.05 3.5±0.05 8.0±0.1 (2.75) 2.0±0.05 f0.5±0.05 0.7±0.05 0.47±0.05 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 60 V Reverse voltage VR Direct reverse voltage Average forward rectified current Non-repetitive forward current surge peak Io IFSM Glass epoxy board mounted, 60Hz half sin wave, resistive load 60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle Operating junction temperature Tj - 60 100 200 150 V mA mA °C Storage temperature Tstg - -55 to +150 °C lElectrical Characteristics (Tj= 25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage Reverse current VF1 IF=10mA - 0.47 0.54 V VF2 IF=15mA - 0.52 0.60 V IR VR=60V - 0.09 1 mA www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/5 2015.03 - Rev.A RB530CM-60 lElectrical Characteristic Curves Data Sheet FORWARD CURRENT : IF (mA) 1000 Tj = 150°C 100 Tj = 125°C Tj = 75°C 10 Tj = 25°C 1 Tj = -25°C 0.1 0 200 400 600 800 1000 1200 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT : IR (mA) 1000 100 Tj = 150°C 10 Tj = 125°C 1 Tj = 75°C 0.1 0.01 0.001 0.0001 0 Tj = 25°C Tj = -25°C 10 20 30 40 50 60 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS : Ct (pF) FORWARD VOLTAGE : VF (mV) 100 580 Tj = 25°C f = 1MHz 570 560 Tj=25°C IF=15mA n=30pcs 10 550 540 530 1 Ave. : 513.3mV 520 510 0.1 0 5 10 15 20 25 30 500 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/5 2015.03 - Rev.A RB530CM-60 lElectrical Characteristic Curves Data Sheet REVERSE CURRENT : IR (mA) 0.7 Tj=25°C 0.6 VR=60V n=30pcs 0.5 0.4 0.3 Ave. : 0.087mA 0.2 0.1 0 IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS : Ct (pF) 8.0 7.5 Tj=25°C f=1MHz 7.0 VR=0V n=10pcs 6.5 6.0 5.5 Ave. : 4.65pF 5.0 4.5 4.0 Ct DISPERSION MAP PEAK SURGE FORWARD CURRENT : IFSM (A) 8 7 IFSM 1cyc 6 8.3ms Ta=25°C 5 Ave. : 3.54A 4 3 2 1 0 IFSM DISPERSION MAP REVERSE RECOVERY TIME : trr (ns) 40 Tj=25°C IF=0.5A IR=1.0A 30 Irr / IR=0.25 n=10pcs 20 Ave. : 9.0ns 10 0 trr DISPERSION MAP www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/5 2015.03 - Rev.A RB530CM-60 lElectrical Characteristic Curves 10 10 IFSM 8.3 8.3 ms ms 1cyc Ta=25°C Data Sheet IFSM time 1cyc Ta=25°C PEAK SURGE FORWARD CURRENT : IFSM (A) PEAK SURGE FORWARD CURRENT : IFSM (A) FORWARD POWER DISSIPATION : PF (W) 1 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1 1 10 100 TIME : t (ms) IFSM-t CHARACTERISTICS 0.25 0.20 Tj = 150°C DC 0.15 D = 1/2 Sin(θ=180) 0.10 0.05 0.00 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT : Io (mA) Io-PF CHARACTERISTICS 0.2 REVERSE POWER DISSIPATION : PR (W) 0.06 0.05 Tj = 150°C 0.04 0.03 Sin(θ=180) 0.02 D = 1/2 DC 0.01 0.00 0 10 20 30 40 50 REVERSE VOLTAGE : VR (V) VR-PR CHARACTERISTICS 60 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/5 2015.03 - Rev.A RB530CM-60 lElectrical Characteristic Curves Data Sheet TRANSIENT THERMAL IMPEDANCE : Rth (°C/W) 1000 Rth(j-a) 100 Rth(j-c) Glass epoxy board mounted IM=10mA IF=100mA time 10 0.001 0.01 0.1 1ms300ms 1 10 100 1000 TIME : t (s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io (A) 0.3 0.2 DC IO 0A 0V VR t T D=t/T VR=VRM/2 Tj=150°C D = 1/2 0.1 Sin(θ=180) 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta (°C) DERATING CURVE (Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT : Io (A) 0.3 0.2 DC IO 0A 0V VR t T D=t/T VR=VRM/2 Tj=150°C D = 1/2 0.1 Sin(θ=180) 0 0 25 50 75 100 125 150 CASE TEMPERATURE : Tc (°C) DERATING CURVE (Io-Tc) ELECTROSTATIC DISCHARGE TEST : ESD (kV) 7 6 AVE. : 5kV 5 4 3 2 AVE. : 0.8kV 1 0 C=200pF C=100pF R=0W R=1.5kW ESD DISPERSION MAP www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/5 2015.03 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifica- tions : 3) Although ROHM is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, an.


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