Document
Schottky Barrier Diode
RB530CM-60
lApplication General rectification
lDimensions (Unit : mm)
0.37±0.05
(1)
Data Sheet
lLand Size Figure (Unit : mm)
0.55
0.86±0.05 1.00±0.05
(0.26±0.05)
0.45 0.5
lFeatures 1) Small mold type
(VMN2M) 2) High reliability 3) Low VF
lConstruction Silicon epitaxial planar type
0~0.10
(2) 0.22±0.05
0.60±0.05
0.16±0.05
ROHM : VMN2M : Manufacture year/ week/ factory
lTaping Dimensions (Unit : mm)
f1.55±0.05
4.0±0.05 2.0±0.05
1.75±0.1
VMN2M (1) Cathode
lStructure
(2) Anode
0.2±0.05
1.1±0.05
3.5±0.05 8.0±0.1
(2.75)
2.0±0.05
f0.5±0.05
0.7±0.05
0.47±0.05
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
60 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io IFSM
Glass epoxy board mounted, 60Hz half sin wave, resistive load
60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle
Operating junction temperature
Tj
-
60 100 200 150
V mA mA °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage Reverse current
VF1 IF=10mA - 0.47 0.54 V
VF2 IF=15mA - 0.52 0.60 V
IR
VR=60V
- 0.09 1 mA
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.03 - Rev.A
RB530CM-60 lElectrical Characteristic Curves
Data Sheet
FORWARD CURRENT : IF (mA)
1000
Tj = 150°C
100 Tj = 125°C Tj = 75°C
10
Tj = 25°C 1
Tj = -25°C
0.1 0
200 400 600 800 1000 1200
FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS
REVERSE CURRENT : IR (mA)
1000 100
Tj = 150°C
10 Tj = 125°C
1 Tj = 75°C
0.1
0.01
0.001
0.0001 0
Tj = 25°C
Tj = -25°C 10 20 30 40 50 60 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN TERMINALS : Ct (pF)
FORWARD VOLTAGE : VF (mV)
100 580
Tj = 25°C f = 1MHz
570 560
Tj=25°C IF=15mA n=30pcs
10 550
540
530 1 Ave. : 513.3mV
520
510
0.1 0
5 10 15 20 25 30
500
REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS
VF DISPERSION MAP
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
2/5
2015.03 - Rev.A
RB530CM-60 lElectrical Characteristic Curves
Data Sheet
REVERSE CURRENT : IR (mA)
0.7 Tj=25°C
0.6 VR=60V n=30pcs
0.5
0.4
0.3 Ave. : 0.087mA
0.2
0.1
0
IR DISPERSION MAP
CAPACITANCE BETWEEN TERMINALS : Ct (pF)
8.0 7.5 Tj=25°C
f=1MHz 7.0 VR=0V
n=10pcs 6.5
6.0
5.5 Ave. : 4.65pF
5.0
4.5
4.0
Ct DISPERSION MAP
PEAK SURGE FORWARD CURRENT : IFSM (A)
8
7
IFSM 1cyc
6
8.3ms Ta=25°C
5 Ave. : 3.54A
4
3
2
1
0
IFSM DISPERSION MAP
REVERSE RECOVERY TIME : trr (ns)
40 Tj=25°C IF=0.5A IR=1.0A
30 Irr / IR=0.25 n=10pcs
20
Ave. : 9.0ns 10
0
trr DISPERSION MAP
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
3/5
2015.03 - Rev.A
RB530CM-60 lElectrical Characteristic Curves
10 10
IFSM
8.3 8.3 ms ms
1cyc
Ta=25°C
Data Sheet
IFSM time
1cyc
Ta=25°C
PEAK SURGE FORWARD CURRENT : IFSM (A)
PEAK SURGE FORWARD CURRENT : IFSM (A)
FORWARD POWER DISSIPATION : PF (W)
1 1 10 100
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
1 1 10 100
TIME : t (ms) IFSM-t CHARACTERISTICS
0.25 0.20
Tj = 150°C
DC 0.15 D = 1/2
Sin(θ=180) 0.10
0.05
0.00 0
0.05 0.1 0.15
AVERAGE RECTIFIED FORWARD CURRENT : Io (mA)
Io-PF CHARACTERISTICS
0.2
REVERSE POWER DISSIPATION : PR (W)
0.06 0.05
Tj = 150°C
0.04
0.03 Sin(θ=180)
0.02 D = 1/2 DC
0.01
0.00 0
10 20 30 40 50
REVERSE VOLTAGE : VR (V) VR-PR CHARACTERISTICS
60
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
4/5
2015.03 - Rev.A
RB530CM-60 lElectrical Characteristic Curves
Data Sheet
TRANSIENT THERMAL IMPEDANCE : Rth (°C/W)
1000
Rth(j-a)
100
Rth(j-c)
Glass epoxy board mounted
IM=10mA
IF=100mA
time
10 0.001 0.01 0.1
1ms300ms
1 10
100 1000
TIME : t (s) Rth-t CHARACTERISTICS
AVERAGE RECTIFIED FORWARD CURRENT : Io (A)
0.3 0.2 DC
IO 0A 0V
VR t T
D=t/T
VR=VRM/2 Tj=150°C
D = 1/2 0.1
Sin(θ=180)
0 0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C) DERATING CURVE (Io-Ta)
AVERAGE RECTIFIED FORWARD CURRENT : Io (A)
0.3 0.2 DC
IO 0A 0V
VR t T
D=t/T
VR=VRM/2 Tj=150°C
D = 1/2 0.1
Sin(θ=180)
0 0 25 50 75 100 125 150
CASE TEMPERATURE : Tc (°C) DERATING CURVE (Io-Tc)
ELECTROSTATIC DISCHARGE TEST : ESD (kV)
7
6 AVE. : 5kV 5
4
3
2 AVE. : 0.8kV
1
0
C=200pF
C=100pF
R=0W
R=1.5kW
ESD DISPERSION MAP
www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.03 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions : 3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, an.