BFQ67

Product specification BFQ67 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. APPLICATIONS Satellite TV tuners and RF portable communications equipment up to 2 GHz. DESCRIPTION Silicon NPN wideband transistor in a plastic SOT23 package. alfpage 3 PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Top view 2 MSB003 Marking code: V2p. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCBO VCEO IC Ptot hFE fT GUM F collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure open emitter open base Ts ≤ 97 °C; note 1 IC = 15 mA; VCE = 5 V IC = 15 mA; VCE = 8 V IC = 15 mA; VCE = 8 V; f = 1 GHz IC = 5 mA; VCE = 8 V; f = 1 GHz Note 1. Ts is the temperature at the soldering point of the collector tab. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature range junction temperature open emitter open base open collector Ts ≤ 97 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. MIN. − − − − 60 − − TYP. − − − − 100 8 14 MAX. UNIT 20 V 10 V 50 mA 300 mW − − GHz − dB − 1.3 − dB MIN. − − − − − −65 − MAX....