RF501BM2SFH

Super Fast Recovery Diode RF501BM2SFH Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) AEC-Q101 Qualified Land Size Figure (Unit : mm) 6.0 3.0 2.0 6.0 Application General rectification Features 1) Low switching loss 2) Low forward voltage Construction Silicon epitaxial planar type 1 ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Taping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 8.0±0.1 1.6 1.6 TO-252 2.3 2.3 Structure Cathode φ1.55±0.1 　　1.　5　5　00.1 Open Anode 0.4±0.1 2.5±0.1 TL 10.1±0.1 16.0±0.2 10.1±0.1 13.5±0.2 7.5±0.05 0～0.5 6.8±0.1 8.0±0.1 φ3.30.00±.10.1 2.7±0.2 Absolute Maximum Ratings (Ta= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 200 V Reverse voltage VR Direct voltage 200 V Average rectified foward current Io 60Hz half sin wave , Resistive load 5A Forward current surge peak IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C 40 A Operating junction temperature Tj - 150 °C Storage temperature Tstg - 55 to 150 °C Electrical Characteristics (Tj = 25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage Reverse current Reverse recovery time Thermal resistance VF IR trr Rth(j-c) IF=5A VR=200V IF=0.5A, IR=1A, Irr=0.25×IR Junction to case - 0.85 0.92 V - 0.05 1 A - 15 25 ns - - 6.0 °C / W www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/4 2015.01- Rev.A RF501BM2SFH Electrical Characteristic Curves Data Sheet ...