RF301BM2S

Super Fast Recovery Diode RF301BM2S Data Sheet lSerise Standard Fast Recovery lDimensions (Unit : mm) lLand Size Figure (Unit : mm) 6.0 3.0 2.0 6.0 lApplication General rectification lFeatures 1) Low switching loss 2) Low forward voltage lConstruction Silicon epitaxial planar type 1 ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date lTaping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 8.0±0.1 1.6 1.6 TO-252 2.3 2.3 lStructure Cathode φ 1.55±0.1 　f　1.　5　5　00.1 Open Anode 0.4±0.1 2.5±0.1 TL 10.1±0.1 16.0±0.2 10.1±0.1 13.5±0.2 7.5±0.05 0～0.5 6.8±0.1 8.0±0.1 fφ3.30.00±.10.1 2.7±0.2 lAbsolute Maximum Ratings (Ta= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 200 V Reverse voltage VR Direct voltage 200 V Average rectified foward current Io 60Hz half sin wave , Resistive load 3A Forward current surge peak IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C 40 A Operating junction temperature Tj - 150 °C Storage temperature Tstg - -55 to +150 °C lElectrical Characteristics (Tj = 25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage Reverse current Reverse recovery time Thermal resistance VF IR trr Rth(j-c) IF=3A VR=200V IF=0.5A, IR=1A, Irr=0.25×IR Junction to case - 0.85 0.93 V - 0.05 10 mA - 13 25 ns - - 6.0 °C / W www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/4 2014.07 - Rev.A RF301BM2S lElectrical Characteristic Curves Data Sheet FORWARD CURRENT : I...