B532

SavantIC Semiconductor wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Product Specification 2SB532 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC Emitter-base voltage Collector current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE -80 -80 -5 -5 60 150 -65~150 UNIT V V V A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A VBE Base-emitter on voltage IC=-4A ; VCE=-5V ICBO Collector cut-off current VCB=-80V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-4V hFE -2 DC current gain IC=-4A ; VCE=-4V fT Transition frequency IC=-1A ; VCE=-4V Product Specification 2SB532 MIN TYP. MAX UNIT -80 V -5 V -2.0 V -1.5 V -0.1 mA -0.1 mA 80 20 10 MHz 2 SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com PACKAGE OUTLINE Product Specification 2SB532 Fig.2 outlin...