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IRFS7430-7PPbF

International Rectifier

Power MOSFET

Application  Brushed Motor drive applications  BLDC Motor drive applications PWM Inverterized topologies Battery...


International Rectifier

IRFS7430-7PPbF

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Description
Application  Brushed Motor drive applications  BLDC Motor drive applications PWM Inverterized topologies Battery powered circuits  Half-bridge and full-bridge topologies  Electronic ballast applications  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  D G S Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant G Gate StrongIRFET™ IRFS7430-7PPbF HEXFET® Power MOSFET VDSS RDS(on) typ. max ID (Silicon Limited) ID (Package Limited) 40V 0.55m 0.75m 522A 240A D Drain S Source Base part number Package Type IRFS7430-7PPbF D2Pak-7Pin Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Orderable Part Number IRFS7430-7PPbF IRFS7430TRL7PP RDS(on), Drain-to -Source On Resistance (m) ID, Drain Current (A) 4.0 ID = 100A 3.0 2.0 TJ = 125°C 1.0 0.0 4 TJ = 25°C 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 600 Limited By Package 500 400 300 200 100 0 25 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014   IRFS7430-7PPbF Absolute Maximium Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25...




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