Power MOSFET
Application Motion Control Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power...
Description
Application Motion Control Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply Hard Switched and High Frequency Circuits
Benefits Low Rdson Reduces Losses Low Gate Charge Improves the Switching Performance Improved Diode Recovery Improves Switching &
EMI Performance 30V Gate Voltage Rating Improves Robustness Fully Characterized Avalanche SOA
IRFS4321-7PPbF
G
D S
HEXFET® Power MOSFET
VDSS RDS(on) typ.
max
ID
150V
11.7m 14.7m
86A
G
Gate
D2Pak 7Pin
D
Drain
S
Source
Base part number Package Type IRFS4321-7PPbF D2Pak-7Pin
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFS4321-7PPbF IRFS4321TRL7PP
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS (Thermally limited) TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
RJC
Junction-to-Case
RJA Junction-to-Ambient
Max. 86 61 343 350 2.3 ± 30 120
-55 to + 175
300
Units
A
W W/°C
V mJ
°C
Typ. –––
–––
Max. 0.43*
40
Units °C/W
RJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by ...
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