IRFS3107-7PPBF

IRFS3107-7PPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free HEXFET® Power MOSFET D VDSS 75V RDS(on) typ. 2.1mΩ max. 2.6mΩ ID 260A S ID (Package Limited) 240A D S SS S S G D2Pak 7 Pin G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Package Limited) cPulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage ePeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR dSingle Pulse Avalanche Energy cAvalanche Current fRepetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter jkJunction-to-Case ijJunction-to-Ambient (PCB Mount) Max. 260 190 240 1060 370 2.5 ± 20 13 -55 to + 175 300 x x10lb in (1.1N m) 320 See Fig. 14, 15, 22a, 22b, Typ. ––– ––– Max. 0.40 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 www.irf.com © 2014 Inter...