Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Description
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
Benefits l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
PD - 96188
IRFS3006PbF IRFSL3006PbF
HEXFET® Power MOSFET
D VDSS RDS(on) typ. max. ID (Silicon Limited)
60V
2.0m: 2.5m:
c270A
S ID (Package Limited) 195A
DD
S G
D2Pak IRFS3006PbF
S D G
TO-262 IRFSL3006PbF
G Gate
D Drain
S Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) IAR EAR
eSingle Pulse Avalanche Energy ÃdAvalanche Current gRepetitive Avalanche Energy
Thermal Resistance
Symbol RθJC RθJA
Parameter
klJunction-to-Case jkJunction-to-Ambient
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Max.
270 191
195 1080 375 2.5 ± 20
10 -55 to + 175
300
x x10lb in (1.1N m)
320 See Fig. 14, 15, 22a, 2...
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