STACK SILICON DIFFUSED DIODE
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES Average Forward Current : IO=35A. Zen...
Description
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES Average Forward Current : IO=35A. Zener Voltage : 37V(Typ.)
POLARITY E35A37VBS (+ Type) E35A37VBR (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak Reverse Surge Current (Pulse width=10mS)
IF(AV) IFSM
IRSM
Transient Peak Reverse Voltage
VRSM
Peak Reverse Voltage Junction Temperature
VRM Tj
Storage Temperature Range
Tstg
RATING 35
300 (60Hz)
35
34 32 -40 215 -40 215
UNIT A A
A
V V
E35A37VBS, E35A37VBR
STACK SILICON DIFFUSED DIODE
A
K H
EI JD
DIM A B C D E F G H I J K
MILLIMETERS
Φ11.5 MAX
Φ12.75+0.09-0.00 Φ1.3+_ 0.04 4.2+_ 0.2 8.0+_ 0.2
TYP 0.5 Φ10.0+_ 0.2 0.4+_ 0.1x45
8.5 MAX
0.2+0.1 28.35+_ 0.5
F
G B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage Zener Voltage Reverse Current
VF VZ IR
Transient Thermal Resistance Breakdown Voltage
VF Vbr
Temperature Coefficient Reverse Leakage Current Under High Temperature
T
HIR
Temperature Resistance
Rth
TEST CONDITION IFM=100A IZ=10mA VR=32V IFM=100A, IM=100mA, Pw=100mS Irsm=35A, Pw=10mS IZ=10mA
Ta=150 , VR=32V
DC total junction to case
MIN. 34 -
-
-
TYP. 37 27
-
-
MAX. 1.15 40 10 70 55
-
UNIT V V A mV V
mV/
100 A
0.8 /W
2002. 1. 30
Revision No : 1
1/1
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