E35A23VS

SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=35A. Zener Voltage : 23V(Typ.) POLARITY E35A23VS E35A23VR (+ Type) (- Type) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Average Forward Current Peak 1 Cycle Surge Current Peak Reverse Surge Current (IRSM/2=10ms) Peak Revese Over Voltage Peak Revese Voltage Junction Temperature IF(AV) IFSM IRSM VRSM VRM Tj Storage Temperature Range Tstg RATING 35 450 (50Hz) 70 70 17 -40 200 -40 150 UNIT A A A V V D2 H T D1 C1 B1 C2 B2 E35A23VS, E35A23VR STACK SILICON DIFFUSED DIODE A3 A2 D3 A1 E FG DIM A1 A2 A3 B1 B2 C1 C2 D1 MILLIMETERS 10.0 +_0.3 13.5 +_0.3 24.0 +_0.5 8.5 +_0.3 10.0 +_ 0.3 2.0 +_ 0.3 5.0 +_0.3 2.5+_ 0.3 DIM D2 D3 E F G H T MILLIMETERS 5.0 +_0.3 4.5+_ 0.3 1.9+_ 0.3 9.0 +_0.3 1.0+_ 0.3 4.4+_ 0.5 0.6+_ 0.3 MR ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Peak Forward Voltage Zener Voltage Repetitive Peak Reverse Current VFM VZ IRRM Transient Thermal Resistance Reverse Leakage Current Under High Temperature VF HIR Temperature Resistance Rth TEST CONDITION IFM=100A IZ=10mA VR=VRM IFM=100A Ta=150 , VR=VRM DC total junction to case MIN. 20 - - - TYP. 23 - - - MAX. 1.05 26 10 90 UNIT V V A mV 2.5 mA 1.0 /W 2009. 12. 15 Revision No : 1 1/1 ...