E35A23VDS

SEMICONDUCTOR TECHNICAL DATA E35A23VDS, E35A23VDR STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=35A. Zener Voltage : 23V(Typ.) POLARITY E35A23VDS (+ Type) E35A23VDR (- Type) FE G L1 CD L2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Average Forward Current Peak 1 Cycle Surge Current Repetitive Peak Revese Voltage Junction Temperature IF(AV) IFSM VRRM Tj 35 350 (10ms Condition) 17 -40 200 Storage Temperature Range Tstg -40 200 UNIT A A V B A DIM MILLIMETERS DIM MILLIMETERS A 9.5+_ 0.2 E 3.1+_ 0.1 B 8.4+_ 0.2 F Φ1.5 C 1.2 D1 G R0.5 L1 5+_ 0.4 DIM TYPE POLARITY L2 S R MILLIMETERS 19.0+_ 1.0 23.0+_ 1.0 PD ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Peak Forward Voltage Reverse Voltage Repetitive Peak Reverse Current Zener Voltage Temperature Coefficient Reverse Leakage Current Under High Temperature VFM VZ IRRM T HIR IFM=100A IR=10mA VR=17V IZ=10mA Ta=150 , VR=VRM Temperature Resistance Rth Junction to case MIN. 20 - - TYP. 23 - 0.077 MAX. 1.15 26 10 - UNIT V V A %/ - - 2.5 mA - 0.8 - /W 2000. 7. 11 Revision No : 0 1/1 ...