2N3819

2N3819 SILICON N-CHANNEL JFET w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR 2N3819 is a silicon N-Channel JFET designed for RF amplifier and mixer applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage Drain-Source Voltage Gate-Source Voltage Continuous Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VDG VDS VGS IG PD TJ, Tstg 25 25 25 10 360 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IGSS VGS=15V IGSS VGS=15V, TA=100°C IDSS VDS=15V 2.0 BVGSS IG=1.0μA 25 VGS(OFF) VDS=15V, ID=2.0nA VGS |Yfs| |Yfs| |Yos| VDS=15V, ID=200μA VDS=15V, VGS=0, f=1.0MHz VDS=15V, VGS=0, f=100MHz VDS=15V, VGS=0, f=1.0kHz 0.5 2.0 1.6 Ciss VDS=15V, VGS=0, f=1.0MHz Crss VDS=15V, VGS=0, f=1.0MHz MAX 2.0 2.0 20 8.0 7.5 6.5 50 8.0 4.0 UNITS V V V mA mW °C UNITS nA μA mA V V V mS mS μS pF pF R1 (9-January 2014) 2N3819 SILICON N-CHANNEL JFET TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Drain 2) Gate 3) Source MARKING: FULL PART NUMBER TYPICAL ELECTRICAL CHARACTERISTICS w w w. c e n t r a l s e m i . c o m R1 (9-January 2014) 2N3819 SILICON N-CHANNEL JFET w w w. c e n t r a l s e m i . c o m R1 (9-January 2014) ...